PART |
Description |
Maker |
LH532600 LH532600N LH532600D LH532600T LH532600TR |
CMOS 2M(256K X 8/128K X 16) Mask-Programmable ROM CMOS 2M (256K x 8/128K x 16) MROM
|
SHARP[Sharp Electrionic Components] Sharp Corporation
|
25C256 CAT25C256 25C128 CAT25C128 CAT25C256S16-1.8 |
256K SPI serial CMOS EEPROM 1.8-6.0V 128K SPI serial CMOS EEPROM 2.5-6.0V SPI Serial EEPROM SPI串行EEPROM 128K/256K-BitSPISerialCMOSE2PROM 64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM 128K SPI serial CMOS EEPROM 1.8-6.0V 256K SPI serial CMOS EEPROM 2.5-6.0V 128K/256K-Bit SPI Serial CMOS E2PROM
|
http:// STMicroelectronics N.V. Semtech, Corp. Abracon, Corp. CatalystSemiconductor CATALYST[Catalyst Semiconductor]
|
CAT25C128XA-1.8-GT3 CAT25C128XA-GT3 CAT25C128XA-1. |
128K/256K-Bit SPI Serial CMOS EEPROM 128K/256K-Bit SPI串行EEPROM中的CMOS
|
ON Semiconductor Unisonic Technologies Co., Ltd. TDK, Corp. Atmel, Corp. Advanced Analog Technology, Inc. Silicon Storage Technology, Inc. Air Cost Control
|
GS840E18AB-190 GS840E18AT-190I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 7.5 ns, PBGA119 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
GS840E36AGT-180I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 8 ns, PQFP100
|
GSI Technology, Inc.
|
LH532000B-1 |
CMOS 2M (256K x 8/128K x 16) MROM
|
SHARP[Sharp Electrionic Components]
|
AS29F200 AS29F200B-120SC AS29F200T-90TI AS29F200B- |
5V 256K X 8/128K X 8 CMOS FLASH EEPROM
|
ALSC[Alliance Semiconductor Corporation]
|
27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 |
(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40 Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
|
Macronix International Co., Ltd.
|
MX28F2100B MX28F2100BMC-12 MX28F2100BMC-70 MX28F21 |
2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
|
MCNIX[Macronix International]
|
AM29F200BB55EI AM29F200BT-90SI AM29F200BT-55EC AM2 |
2 Mb (256K x 8, 128K x 16) Boot Sector, Flash Memory 256K X 8 FLASH 5V PROM, 55 ns, PDSO48 FLASH 128K X 16 TSOP-48
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
GS84032AB-180 GS84018AB-180 GS84036AB-180 GS84036A |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256 × 1828K的3228K的36 4Mb的同步突发静态存储器 256K x 18/ 128K x 32/ 128K x 36 4Mb Sync Burst SRAMs Time-Delay Relay; Contacts:SPST-NC; Time Range:0.1 - 60 sec.; Mounting Type:Panel; Timing Function:Delay-On-Break; Supply Voltage:12VDC; Time Range Max:60s; Time Range Min:0.1s
|
ETC Electronic Theatre Controls, Inc.
|